Oxidation Resistance of AlN Coated Graphite Prepared by Plasma Enhanced CVD

Excellent Field Emission Properties of Short Conical Carbon Nanotubes Prepared by Microwave Plasma Enhanced CVD Process

Randomly oriented short and low density conical carbon nanotubes (CNTs) were prepared on Si substrates by tubular microwave plasma enhanced chemical vapor deposition process at relatively low temperature (350–550 C) by judiciously controlling the microwave power and growth time in C2H2 + NH3 gas composition and Fe catalyst. Both length as well as density of the CNTs increased with increasing mi...

Low-pressure CVD and Plasma- Enhanced CVD

LPCVD is a process used in the manufacturing of the deposition of thin films on semiconductors usually ranging from a few nanometers to many micrometers. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage. These films include a variety of materials including polysilicon for gate contacts, thick oxides used for isolation, doped oxides for global...

Oxidation resistance of plasma coated and laser treated mild steel

Stainless steel powder was coated on mild steel substrate using plasma coating. The porous coating thus obtained was modified using laser irradiation. The oxidation behaviour of the plasma coated as well as laser treated material was studied in air at 1073 K. There was considerable decrease in oxidation rate of mild steel after plasma coating as expected. In addition the oxidation resistance im...

Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition

Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated systematically. Although the deposition of Co3O4 does not change the anatase structure and crystallite size of P25 powders, the ultraviolet ph...

Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition